IAUCN10S7N021ATMA1 vs BSC0906NSATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S7N021ATMA1 by Infineon and BSC0906NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN10S7N021ATMA1

IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΞ© OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7N021ATMA1 βœ“ Active
Infineon
BSC0906NSATMA1

BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN10S7N021ATMA1 BSC0906NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $0.48
FET Type N-Channel N-Channel
Technology OptiMOSβ„’ 7 (trench MOSFET) OptiMOS
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at Tc 175 A 63 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] β€”
RDS(on) max @ VGS=10 V 2.1 mΞ© β€”
Gate-Source Threshold (VGS(th)) typ 3.2 V β€”
Total Gate Charge (Qg) @ VGS=10 V 105 nC β€”
Input Capacitance (Ciss) 2.98 nF β€”
Output Capacitance (Coss) 32 pF β€”
Reverse Transfer Capacitance (Crss) 7.153 nF β€”
Power Dissipation (Pd) @ Tc 217 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Mounting Type Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) β€”
RoHS Status Compliant Compliant
Drain-to-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) at Ta β€” 18 A
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 30 W
RDS(on) max (typical reference) β€” [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg @ VGS=10V]
Operating Temperature Range β€” -55C to +150C (junction, typical)
Pin Count β€” 8

Datasheets & Resources

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