IAUCN10S7N021ATMA1 vs IAUC28N08S5L230ATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7N021ATMA1 by Infineon and IAUC28N08S5L230ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7N021ATMA1
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 β ActiveInfineon
IAUC28N08S5L230ATMA1
IAUC28N08S5L230ATMA1 - 80V 28A 23mΞ© OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S7N021ATMA1 | IAUC28N08S5L230ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $0.71 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOSβ’ 7 (trench MOSFET) | OptiMOS-5 Power MOSFET |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Tc | 175 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | β |
| RDS(on) max @ VGS=10 V | 2.1 mΞ© | β |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | β |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | β |
| Input Capacitance (Ciss) | 2.98 nF | β |
| Output Capacitance (Coss) | 32 pF | β |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | β |
| Power Dissipation (Pd) @ Tc | 217 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-TDSON-8-33 (5x6 mm SSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS-5 |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | β | 28 A |
| Pulsed Drain Current (I<sub>DM</sub>) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | β | 23 mΞ© (typ) |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | β | 2.5 V |
| Gate Charge (Q<sub>g</sub>, typ) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | β | 38 W |
| Automotive Qualified | β | Yes (AEC-Q101) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |