IAUCN10S7N021ATMA1 vs IAUCN04S7N009ATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S7N021ATMA1 by Infineon and IAUCN04S7N009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN10S7N021ATMA1

IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΞ© OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7N021ATMA1 βœ“ Active
Infineon
IAUCN04S7N009ATMA1

IAUCN04S7N009ATMA1 - 40V 0.96mΞ© 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN10S7N021ATMA1 IAUCN04S7N009ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $1.55
FET Type N-Channel N-Channel
Technology OptiMOSβ„’ 7 (trench MOSFET) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at Tc 175 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] β€”
RDS(on) max @ VGS=10 V 2.1 mΞ© β€”
Gate-Source Threshold (VGS(th)) typ 3.2 V β€”
Total Gate Charge (Qg) @ VGS=10 V 105 nC β€”
Input Capacitance (Ciss) 2.98 nF β€”
Output Capacitance (Coss) 32 pF β€”
Reverse Transfer Capacitance (Crss) 7.153 nF β€”
Power Dissipation (Pd) @ Tc 217 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8-34 (Surface Mount)
Mounting Type Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 7
Drain-to-Source Voltage (V_DSS) β€” 40 V
Continuous Drain Current (I_D) β€” 175 A
R_DS(on) Max @ V_GS = 10 V β€” 0.96 mΞ©
Gate Drive Voltage (V_GS) β€” 10 V
Operating Temperature β€” -55C to +175C
MSL Level β€” 1
Configuration β€” Single N-Channel
Supplier Device Package β€” PG-TDSON-8-34

Datasheets & Resources

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