IAUCN10S7N021ATMA1 vs IAUT300N08S5N012ATMA2 Comparison
Detailed side-by-side comparison of IAUCN10S7N021ATMA1 by Infineon and IAUT300N08S5N012ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7N021ATMA1
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 β ActiveInfineon
IAUT300N08S5N012ATMA2
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΞ© N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 β ActiveSpecification Comparison
| Parameter | IAUCN10S7N021ATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $2.20 |
| FET Type | N-Channel | β |
| Technology | OptiMOSβ’ 7 (trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Tc | 175 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | 1200 A (per datasheet, typical) |
| RDS(on) max @ VGS=10 V | 2.1 mΞ© | β |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | β |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | β |
| Input Capacitance (Ciss) | 2.98 nF | β |
| Output Capacitance (Coss) | 32 pF | β |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | β |
| Power Dissipation (Pd) @ Tc | 217 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | β |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOSβ’-5 80 V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 300 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.2 mΞ© |
| Maximum Power Dissipation (PD, Tc) | β | 375 W |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| Automotive Qualification | β | AEC-Q101 qualified |
| RoHS Compliance | β | Compliant |
| MSL Level | β | [DATA_NEEDED: MSL level] |