IAUCN10S7N021ATMA1 vs IPG16N10S461AATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7N021ATMA1 by Infineon and IPG16N10S461AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7N021ATMA1
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ ActiveInfineon
IPG16N10S461AATMA1
IPG16N10S461AATMA1 - Dual N-Ch 100V 16A 61mΩ MOSFET | Infineon
IPG16N10S461AATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN10S7N021ATMA1 | IPG16N10S461AATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $0.82 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (trench MOSFET) | OptiMOS™ trench |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 175 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-TDSON-8-10 (Wettable Flank) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Type | — | Dual N-Channel MOSFET Array |
| Continuous Drain Current (ID) | — | 16 A |
| On-Resistance R_DS(on) typ. | — | 61 mΩ |
| Total Power Dissipation (Ptot) | — | 29 W (T_C = 25°C) |
| Configuration | — | 2 N-Channel (Dual, separate) |
| Gate Threshold Voltage V_GS(th) typ. | — | [DATA_NEEDED: gate threshold voltage] |
| Maximum Junction Temperature | — | 175 °C |
| Operating Temperature Range | — | -55 °C to +175 °C |
| Terminal Count | — | 8 |
| MSL Level | — | [DATA_NEEDED: MSL rating] |
| Built-in Body Diode | — | Yes |
| Channel Mode | — | Enhancement |