IAUCN10S7N021ATMA1 vs IPN95R3K7P7ATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S7N021ATMA1 by Infineon and IPN95R3K7P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN10S7N021ATMA1

IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΞ© OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7N021ATMA1 βœ“ Active
Infineon
IPN95R3K7P7ATMA1

IPN95R3K7P7ATMA1 - 950V CoolMOS P7 N-MOSFET 2A SOT-223 | Infineon

IPN95R3K7P7ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN10S7N021ATMA1 IPN95R3K7P7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $0.44
FET Type N-Channel β€”
Technology OptiMOSβ„’ 7 (trench MOSFET) Super-junction (CoolMOS P7)
Drain-Source Voltage (VDS) 100 V 950 V
Continuous Drain Current (ID) at Tc 175 A 2.0 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] β€”
RDS(on) max @ VGS=10 V 2.1 mΞ© β€”
Gate-Source Threshold (VGS(th)) typ 3.2 V β€”
Total Gate Charge (Qg) @ VGS=10 V 105 nC β€”
Input Capacitance (Ciss) 2.98 nF β€”
Output Capacitance (Coss) 32 pF β€”
Reverse Transfer Capacitance (Crss) 7.153 nF β€”
Power Dissipation (Pd) @ Tc 217 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C -55 C to +150 C
Package PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-SOT223 (3-pin + tab, surface mount)
Mounting Type Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Series β€” CoolMOS P7
Transistor Type β€” N-Channel MOSFET
Power Dissipation (Pd) at Tc β€” 6 W
On-State Resistance (RDS(on)) max β€” 3700 mOhm
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ β€” [DATA_NEEDED: VGS(th) typ]
Lead-Free β€” Yes
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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