IAUT300N08S5N011ATMA1 vs IAUT300N08S5N012ATMA2 Comparison
Detailed side-by-side comparison of IAUT300N08S5N011ATMA1 by Infineon and IAUT300N08S5N012ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET
IAUT300N08S5N011ATMA1 β ActiveInfineon
IAUT300N08S5N012ATMA2
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΞ© N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 β ActiveSpecification Comparison
| Parameter | IAUT300N08S5N011ATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.40 | $2.20 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench MOSFET) | β |
| Drain-Source Voltage (V_DS) | 80 V | β |
| Continuous Drain Current (I_D, T_C=25C) | 300 A | β |
| Pulsed Drain Current (I_DM) | 410 A (Tj) | β |
| R_DS(on) max | 1.10 mOhm at V_GS=10 V | β |
| Gate Threshold Voltage (V_GS(th)) | 3.8 V | β |
| Total Gate Charge (Q_g) | 231 nC at V_GS=10 V | β |
| Input Capacitance (C_iss) | 16.25 nF | β |
| Output Capacitance (C_oss) | 2.6 nF | β |
| Reverse Transfer Capacitance (C_rss) | 130 pF | β |
| Power Dissipation (P_D) | 375 W at T_C=25C | β |
| Operating Temperature Range | -55C to +175C | -55 Β°C to +175 Β°C (TJ) |
| Package | PG-HSOF-8-1 (TOLL 10x12 mm) | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Qualification | Automotive (AEC-Q101) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOSβ’-5 80 V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 300 A |
| Pulsed Drain Current (IDM) | β | 1200 A (per datasheet, typical) |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.2 mΞ© |
| Maximum Power Dissipation (PD, Tc) | β | 375 W |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Automotive Qualification | β | AEC-Q101 qualified |
| RoHS Compliance | β | Compliant |