IAUT300N08S5N011ATMA1 vs ISC0703NLSATMA1 Comparison
Detailed side-by-side comparison of IAUT300N08S5N011ATMA1 by Infineon and ISC0703NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET
IAUT300N08S5N011ATMA1 β ActiveSpecification Comparison
| Parameter | IAUT300N08S5N011ATMA1 | ISC0703NLSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.40 | $0.51 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench MOSFET) | Trench MOSFET (OptiMOS family) |
| Drain-Source Voltage (V_DS) | 80 V | β |
| Continuous Drain Current (I_D, T_C=25C) | 300 A | β |
| Pulsed Drain Current (I_DM) | 410 A (Tj) | β |
| R_DS(on) max | 1.10 mOhm at V_GS=10 V | β |
| Gate Threshold Voltage (V_GS(th)) | 3.8 V | β |
| Total Gate Charge (Q_g) | 231 nC at V_GS=10 V | β |
| Input Capacitance (C_iss) | 16.25 nF | β |
| Output Capacitance (C_oss) | 2.6 nF | β |
| Reverse Transfer Capacitance (C_rss) | 130 pF | β |
| Power Dissipation (P_D) | 375 W at T_C=25C | β |
| Operating Temperature Range | -55C to +175C | -55C to +150C (junction) |
| Package | PG-HSOF-8-1 (TOLL 10x12 mm) | PG-TDSON-8 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Qualification | Automotive (AEC-Q101) | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Ta=25C | β | 13 A |
| Continuous Drain Current (ID) at Tc=25C | β | 57 A |
| Power Dissipation (PD) at Ta=25C | β | 3 W |
| Power Dissipation (PD) at Tc=25C | β | 44 W |
| Standard Package Quantity | β | 5,000 (reel) |
| RoHS Status | β | Compliant |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS rating] |