IAUT300N08S5N012ATMA2 vs BSC076N06NS3GATMA1 Comparison

Detailed side-by-side comparison of IAUT300N08S5N012ATMA2 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Active

Specification Comparison

Parameter IAUT300N08S5N012ATMA2 BSC076N06NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.20 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™-5 80 V OptiMOS 3
Transistor Type N-Channel MOSFET
Drain-to-Source Voltage (VDS) 80 V
Continuous Drain Current (ID, Tc=25°C) 300 A
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical)
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ
Maximum Power Dissipation (PD, Tc) 375 W
Gate-to-Source Voltage (VGS) ±20 V
Operating Temperature Range -55 °C to +175 °C (TJ) -55C to +150C
Package PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified
RoHS Compliance Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] 1 (unlimited)
Technology N-Channel Trench MOSFET
Drain-Source Voltage (VDS) 60 V
Continuous Drain Current (ID) at TC=25C 50 A
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ
Gate-Source Voltage (VGS) max ±20 V
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V
Total Gate Charge (Qg) [DATA_NEEDED: Qg value]
Power Dissipation (Ta) 2.5 W
Power Dissipation (Tc) 69 W
Halogen-Free Yes (per Infineon product page)

Datasheets & Resources

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