IAUT300N08S5N012ATMA2 vs BSC117N08NS5ATMA1 Comparison

Detailed side-by-side comparison of IAUT300N08S5N012ATMA2 by Infineon and BSC117N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΞ© N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 βœ“ Active
Infineon
BSC117N08NS5ATMA1

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter IAUT300N08S5N012ATMA2 BSC117N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.20 $0.46
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOSβ„’-5 80 V β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-to-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID, Tc=25Β°C) 300 A β€”
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) β€”
On-Resistance RDS(on) max @ VGS=10V 1.2 mΞ© β€”
Maximum Power Dissipation (PD, Tc) 375 W β€”
Gate-to-Source Voltage (VGS) Β±20 V β€”
Operating Temperature Range -55 Β°C to +175 Β°C (TJ) -55 C to +150 C (typical MOSFET junction)
Package PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-TDSON-8-7 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified β€”
RoHS Compliance Compliant β€”
MSL Level [DATA_NEEDED: MSL level] 1
Part Number β€” BSC117N08NS5ATMA1
Technology β€” OptiMOS 5
Drain-Source Voltage (VDS) max β€” 80 V
Continuous Drain Current (ID) max β€” 49 A (Tc)
On-State Resistance (RDS(on)) max β€” 11.7 mOhm
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 50 W
Pin Count β€” 8
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
RoHS Status β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

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