IAUT300N08S5N012ATMA2 vs IAUC100N10S5N040ATMA1 Comparison
Detailed side-by-side comparison of IAUT300N08S5N012ATMA2 by Infineon and IAUC100N10S5N040ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUT300N08S5N012ATMA2
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΞ© N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 β ActiveInfineon
IAUC100N10S5N040ATMA1
IAUC100N10S5N040ATMA1 - 100V 4mΞ© 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 β ActiveSpecification Comparison
| Parameter | IAUT300N08S5N012ATMA2 | IAUC100N10S5N040ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.20 | $1.62 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOSβ’-5 80 V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 300 A | β |
| Pulsed Drain Current (IDM) | 1200 A (per datasheet, typical) | 400 A |
| On-Resistance RDS(on) max @ VGS=10V | 1.2 mΞ© | β |
| Maximum Power Dissipation (PD, Tc) | 375 W | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | -55C to +175C (junction) |
| Package | PG-HSOF-8-1 (8-pin HSOF with drain tab) | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL level] | MSL1 (up to 260C peak reflow) |
| FET Type | β | N-Channel, Enhancement Mode |
| Technology | β | OptiMOS-5 |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) @ TC=25C | β | 100 A (package-limited) |
| RDS(on) max @ VGS=10V | β | 4 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| Maximum Power Dissipation (PD) | β | 167 W @ TC=25C |
| Thermal Resistance, Junction-to-Case (RthJC) | β | 0.9 K/W |
| Avalanche Rating | β | 100% Avalanche tested |
| AOI Compatibility | β | Feasible for Automatic Optical Inspection |
| RoHS Status | β | Compliant |