IAUT300N08S5N012ATMA2 vs IAUCN10S7N021ATMA1 Comparison
Detailed side-by-side comparison of IAUT300N08S5N012ATMA2 by Infineon and IAUCN10S7N021ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUT300N08S5N012ATMA2
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΞ© N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 β ActiveInfineon
IAUCN10S7N021ATMA1
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 β ActiveSpecification Comparison
| Parameter | IAUT300N08S5N012ATMA2 | IAUCN10S7N021ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.20 | $2.05 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOSβ’-5 80 V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 300 A | β |
| Pulsed Drain Current (IDM) | 1200 A (per datasheet, typical) | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance RDS(on) max @ VGS=10V | 1.2 mΞ© | β |
| Maximum Power Dissipation (PD, Tc) | 375 W | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | β |
| Package | PG-HSOF-8-1 (8-pin HSOF with drain tab) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| FET Type | β | N-Channel |
| Technology | β | OptiMOSβ’ 7 (trench MOSFET) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tc | β | 175 A |
| RDS(on) max @ VGS=10 V | β | 2.1 mΞ© |
| Gate-Source Threshold (VGS(th)) typ | β | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | β | 105 nC |
| Input Capacitance (Ciss) | β | 2.98 nF |
| Output Capacitance (Coss) | β | 32 pF |
| Reverse Transfer Capacitance (Crss) | β | 7.153 nF |
| Power Dissipation (Pd) @ Tc | β | 217 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Qualification | β | AEC-Q101 (Automotive) |
| RoHS Status | β | Compliant |