IAUT300N08S5N012ATMA2 vs IPG20N06S4L14AATMA1 Comparison

Detailed side-by-side comparison of IAUT300N08S5N012ATMA2 by Infineon and IPG20N06S4L14AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Active
Infineon
IPG20N06S4L14AATMA1

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ Active

Specification Comparison

Parameter IAUT300N08S5N012ATMA2 IPG20N06S4L14AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.20 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™-5 80 V
Transistor Type N-Channel MOSFET
Drain-to-Source Voltage (VDS) 80 V 60 V
Continuous Drain Current (ID, Tc=25°C) 300 A
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical)
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ
Maximum Power Dissipation (PD, Tc) 375 W
Gate-to-Source Voltage (VGS) ±20 V
Operating Temperature Range -55 °C to +175 °C (TJ) -55°C to +175°C (junction)
Package PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-TDSON-8-10 (Wettable Flank)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS Compliance Compliant Green Product (RoHS compliant)
MSL Level [DATA_NEEDED: MSL level]
Part Number IPG20N06S4L14AATMA1
FET Type 2 N-Channel (Dual)
Continuous Drain Current (ID) 20 A (per channel)
Power Dissipation (PD) 50 W
RDS(on) at VGS=10V 13.7 mΩ typical
RDS(on) at VGS=4.5V 14 mΩ typical
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)]
Logic-Level Gate Drive Yes
Peak Reflow Temperature 260°C
Avalanche Tested 100% (per datasheet)
AOI Compatible Yes (Wettable Flank)
Technology OptiMOS™ Trench

Datasheets & Resources

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