IAUT300N10S5N015ATMA1 vs IAUC100N04S6L020ATMA1 Comparison

Detailed side-by-side comparison of IAUT300N10S5N015ATMA1 by Infineon and IAUC100N04S6L020ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUT300N10S5N015ATMA1

IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 βœ“ Active
Infineon
IAUC100N04S6L020ATMA1

IAUC100N04S6L020ATMA1 - 40V 100A 2mΞ© OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 βœ“ Active

Specification Comparison

Parameter IAUT300N10S5N015ATMA1 IAUC100N04S6L020ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.10 $0.86
Technology OptiMOS 5 N-Channel Power MOSFET OptiMOS 6
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID, Tc) 300 A β€”
Power Dissipation (PD, Tc) 375 W β€”
RDS(on) (typ, VGS=10V) 1.5 mΞ© β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) value] β€”
Operating Temperature Range -55Β°C to +175Β°C -55 Β°C to +175 Β°C (TJ)
Package PG-HSOF-8-1 (HSOF-8) PG-TDSON-8 (SS08, 5x6 mm leadless)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified β€”
MSL Level MSL1 (260Β°C peak reflow) β€”
RoHS Compliance RoHS compliant (Green product) β€”
Avalanche Tested 100% avalanche tested β€”
Polarity N-Channel β€”
Mode of Operation Enhancement-mode β€”
FET Type β€” N-Channel
Drain-Source Breakdown Voltage V(BR)DSS β€” 40 V
Continuous Drain Current (Tc) β€” 100 A
Power Dissipation (Tc) β€” 75 W
RDS(on) Maximum @ VGS=10V, ID=50A β€” 2.04 mΞ©
RDS(on) Typical β€” 2.0 mΞ©
Gate-Source Voltage VGS (max) β€” Β±20 V
Gate Threshold Voltage VGS(th) Typical β€” 2.0 V
Qualification β€” Automotive grade
Packaging β€” Tape & Reel (TMA1)
RoHS Status β€” Compliant

Datasheets & Resources

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