IAUT300N10S5N015ATMA1 vs ISC011N03L5SATMA1 Comparison
Detailed side-by-side comparison of IAUT300N10S5N015ATMA1 by Infineon and ISC011N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon
IAUT300N10S5N015ATMA1 β ActiveSpecification Comparison
| Parameter | IAUT300N10S5N015ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.10 | $0.47 |
| Technology | OptiMOS 5 N-Channel Power MOSFET | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID, Tc) | 300 A | β |
| Power Dissipation (PD, Tc) | 375 W | β |
| RDS(on) (typ, VGS=10V) | 1.5 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) value] | β |
| Operating Temperature Range | -55Β°C to +175Β°C | β |
| Package | PG-HSOF-8-1 (HSOF-8) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | MSL1 (260Β°C peak reflow) | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | RoHS compliant (Green product) | β |
| Avalanche Tested | 100% avalanche tested | β |
| Polarity | N-Channel | β |
| Mode of Operation | Enhancement-mode | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 / StrongIRFET 30 V |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | β | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | β | 100 A |
| Power Dissipation (PD) @ Ta=25C | β | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | β | 96 W |
| Operating Temperature | β | -55 C to +175 C (TJ) |
| Gate Drive | β | Logic-level compatible |
| RoHS Status | β | Compliant |