IAUZ18N10S5L420ATMA1 vs BSC0901NSIATMA1 Comparison
Detailed side-by-side comparison of IAUZ18N10S5L420ATMA1 by Infineon and BSC0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΞ© N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 β ActiveInfineon
BSC0901NSIATMA1
BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon
BSC0901NSIATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ18N10S5L420ATMA1 | BSC0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.38 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 100V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at TC=25Β°C | 18 A | β |
| On-Resistance RDS(on) max at VGS=10V | 42 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.7 V to 2.7 V | β |
| Total Gate Charge (Qg) typ. | 8.5 nC | β |
| Power Dissipation (PD) at TC=25Β°C | 30 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-TDSON-8-6 (5x6 mm with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| Technology | OptiMOS 5 trench | OptiMOS 25V N-Channel Power MOSFET |
| Configuration | Single with built-in diode | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Continuous Drain Current (ID) at Ta=25C | β | 28 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10V | β | 2.0 mOhm typical |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2.2 V max |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge nC] |
| Power Dissipation (PD) at Ta=25C | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 69 W |
| Operating Temperature Range | β | -55 C to +150 C |
| Pin Count | β | 8 |
| Halogen-Free | β | Yes |