IAUZ18N10S5L420ATMA1 vs IAUS260N10S5N019TATMA1 Comparison
Detailed side-by-side comparison of IAUZ18N10S5L420ATMA1 by Infineon and IAUS260N10S5N019TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΞ© N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 β ActiveInfineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΞ© OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ18N10S5L420ATMA1 | IAUS260N10S5N019TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $2.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 100V | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 18 A | β |
| On-Resistance RDS(on) max at VGS=10V | 42 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.7 V to 2.7 V | β |
| Total Gate Charge (Qg) typ. | 8.5 nC | β |
| Power Dissipation (PD) at TC=25Β°C | 30 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| Technology | OptiMOS 5 trench | OptiMOS 5 trench-gate |
| Configuration | Single with built-in diode | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Product Series | β | OptiMOS 5 |
| Drain-to-Source Voltage (Vds) | β | 100 V |
| Continuous Drain Current (Id) | β | 260 A (Tj) |
| On-State Resistance (Rds(on)) | β | 1.9 mΞ© (typical, 10 V Vgs) |
| Power Dissipation (Pd) | β | 300 W (Tc) |
| Pin Count | β | 16 |
| Operating Temperature Range | β | -55 C to +175 C (Tj) |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| Automotive Qualified | β | Yes (IAUS prefix denotes automotive grade) |