IAUZ20N08S5L300ATMA1 vs BSC123N08NS3GATMA1 Comparison
Detailed side-by-side comparison of IAUZ20N08S5L300ATMA1 by Infineon and BSC123N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ20N08S5L300ATMA1 β ActiveInfineon
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ20N08S5L300ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 | β |
| Polarity | N-Channel | β |
| Drain-Source Voltage (Vds) | 80 V | β |
| Continuous Drain Current (Id) | 20 A (Tc) | β |
| Power Dissipation (Pd) | 30 W (Tc) | β |
| On-State Resistance (Rds(on)) | 30 mΞ© @ 10 A, 10 V | β |
| Gate Threshold Voltage (Vgs(th)) | Β±20 V (max Vgs rating) | β |
| Input Capacitance (Ciss) | 599 pF @ 40 V | β |
| Total Gate Charge (Qg) | 10.5 nC @ 10 V | [DATA_NEEDED: Qg] |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55C to +150C |
| Package | PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (automotive) | β |
| Technology | Trench MOSFET (OptiMOS-5) | β |
| RoHS Status | Compliant | Compliant with exemption |
| Part Family | β | OptiMOS 3 |
| Channel Type | β | N-Channel |
| Configuration | β | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | β | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | β | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | β | 11 A |
| Maximum Pulsed Drain Current | β | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | β | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (Tc) | β | 66 W |
| Power Dissipation (Ta) | β | 2.5 W |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | β | Yes (AEC-Q101) |