IAUZ30N08S5N186ATMA1 vs IAUC100N04S6N028ATMA1 Comparison
Detailed side-by-side comparison of IAUZ30N08S5N186ATMA1 by Infineon and IAUC100N04S6N028ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ30N08S5N186ATMA1
IAUZ30N08S5N186ATMA1 - 80V 18.6mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 β ActiveInfineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ30N08S5N186ATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.42 |
| Technology | OptiMOS 5 N-Channel Power MOSFET (trench) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tj) | 30 A | β |
| Power Dissipation (PD, Tc) | 41 W | β |
| On-State Resistance (RDS(on)) | 18.6 mΞ© (typical, VGS = 10 V) | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (automotive) | -55 Β°C to +175 Β°C |
| Package | PG-TSDSON-8-32 (5x6 mm) | PG-TDSON-8 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 6 40V |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D) at T_C=25Β°C | β | 100 A |
| Pulsed Drain Current (I_DM) | β | 400 A |
| R_DS(on) max @ V_GS=10V | β | 2.8 mΞ© (typical) |
| Gate Threshold Voltage (V_GS(th)) | β | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25Β°C | β | 62 W |
| Automotive Qualified | β | Yes |