IAUZ30N08S5N186ATMA1 vs IAUC100N08S5N043ATMA1 Comparison
Detailed side-by-side comparison of IAUZ30N08S5N186ATMA1 by Infineon and IAUC100N08S5N043ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ30N08S5N186ATMA1
IAUZ30N08S5N186ATMA1 - 80V 18.6mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 β ActiveInfineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ30N08S5N186ATMA1 | IAUC100N08S5N043ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $1.72 |
| Technology | OptiMOS 5 N-Channel Power MOSFET (trench) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tj) | 30 A | β |
| Power Dissipation (PD, Tc) | 41 W | β |
| On-State Resistance (RDS(on)) | 18.6 mΞ© (typical, VGS = 10 V) | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (automotive) | -55Β°C to +175Β°C |
| Package | PG-TSDSON-8-32 (5x6 mm) | PG-TDSON-8-34 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | β |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Manufacturer | β | Infineon Technologies |
| Part Series | β | IAUC / OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET (Enhancement Mode) |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | β | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 100 A (package limited) |
| Continuous Drain Current (chip-limited) | β | 120 A at T<sub>C</sub>=25Β°C, R<sub>thJC</sub>=1.2 K/W |
| Maximum R<sub>DS(on)</sub> | β | 4.3 mΞ© |
| Maximum Power Dissipation (P<sub>D</sub>) | β | 125 W (T<sub>C</sub>) |
| Pin Count | β | 8 |
| Moisture Sensitivity Level (MSL) | β | MSL1 (up to 260Β°C peak reflow) |
| Avalanche Rating | β | 100% Avalanche Tested |
| RoHS / REACH | β | RoHS Compliant (Green Product) |
| Channel Mode | β | Enhancement |