IAUZ30N08S5N186ATMA1 vs IAUC60N06S5L073ATMA1 Comparison
Detailed side-by-side comparison of IAUZ30N08S5N186ATMA1 by Infineon and IAUC60N06S5L073ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ30N08S5N186ATMA1
IAUZ30N08S5N186ATMA1 - 80V 18.6mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 β ActiveInfineon
IAUC60N06S5L073ATMA1
IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
IAUC60N06S5L073ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ30N08S5N186ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.41 |
| Technology | OptiMOS 5 N-Channel Power MOSFET (trench) | Trench (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tj) | 30 A | β |
| Power Dissipation (PD, Tc) | 41 W | β |
| On-State Resistance (RDS(on)) | 18.6 mΞ© (typical, VGS = 10 V) | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (automotive) | -55C to +175C |
| Package | PG-TSDSON-8-32 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tj | β | 60 A |
| On-Resistance RDS(on) max | β | 7.3 mΞ© |
| Total Gate Charge (QG) | β | 17.4 nC |
| Power Dissipation (PD) at Tc | β | 52 W |
| Number of Pins | β | 8 |
| Configuration | β | Single N-Channel |
| Qualification | β | AEC-Q101 automotive grade |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RΞΈJA | β | [DATA_NEEDED: thermal resistance junction-to-ambient] |