IAUZ30N08S5N186ATMA1 vs IAUZ18N10S5L420ATMA1 Comparison
Detailed side-by-side comparison of IAUZ30N08S5N186ATMA1 by Infineon and IAUZ18N10S5L420ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ30N08S5N186ATMA1
IAUZ30N08S5N186ATMA1 - 80V 18.6mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 β ActiveInfineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΞ© N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ30N08S5N186ATMA1 | IAUZ18N10S5L420ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.48 |
| Technology | OptiMOS 5 N-Channel Power MOSFET (trench) | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (ID, Tj) | 30 A | β |
| Power Dissipation (PD, Tc) | 41 W | β |
| On-State Resistance (RDS(on)) | 18.6 mΞ© (typical, VGS = 10 V) | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 1.7 V to 2.7 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (automotive) | β |
| Package | PG-TSDSON-8-32 (5x6 mm) | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 100V |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25Β°C | β | 18 A |
| On-Resistance RDS(on) max at VGS=10V | β | 42 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Total Gate Charge (Qg) typ. | β | 8.5 nC |
| Power Dissipation (PD) at TC=25Β°C | β | 30 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Configuration | β | Single with built-in diode |