IAUZ30N08S5N186ATMA1 vs IAUZ40N10S5N130ATMA1 Comparison
Detailed side-by-side comparison of IAUZ30N08S5N186ATMA1 by Infineon and IAUZ40N10S5N130ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ30N08S5N186ATMA1
IAUZ30N08S5N186ATMA1 - 80V 18.6mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 β ActiveInfineon
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N10S5N130ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ30N08S5N186ATMA1 | IAUZ40N10S5N130ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.52 |
| Technology | OptiMOS 5 N-Channel Power MOSFET (trench) | OptiMOS 5 (super-junction trench) |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (ID, Tj) | 30 A | β |
| Power Dissipation (PD, Tc) | 41 W | β |
| On-State Resistance (RDS(on)) | 18.6 mΞ© (typical, VGS = 10 V) | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (automotive) | -55Β°C to +175Β°C (TJ) |
| Package | PG-TSDSON-8-32 (5x6 mm) | PG-TSDSON-8-33 (S3O8), 3.3 Γ 3.3 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | β |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IAUZ40N10S5N130ATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 40 A |
| Pulsed Drain Current (IDM) | β | 160 A |
| RDS(on) max at VGS=10V | β | 13 mΞ© |
| RDS(on) typical | β | 10 mΞ© |
| Maximum Power Dissipation (Tc) | β | 68 W |
| Lead-Free / RoHS | β | ROHS3 Compliant |