IAUZ30N10S5L240ATMA1 vs IAUC100N08S5N043ATMA1 Comparison
Detailed side-by-side comparison of IAUZ30N10S5L240ATMA1 by Infineon and IAUC100N08S5N043ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 β ActiveInfineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ30N10S5L240ATMA1 | IAUC100N08S5N043ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $1.72 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D, Tc) | 30 A | β |
| R_DS(on) max at V_GS=10V | 24 mΞ© | β |
| Gate-Source Voltage (V_GS) max | Β±20 V | β |
| Gate Charge (Q_g) typ | 14 nC at V_GS=10V | β |
| Input Capacitance (C_iss) typ | 832 pF at V_DS=50V | β |
| Power Dissipation (P_D, Tc) | 45.5 W | β |
| Package | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) | PG-TDSON-8-34 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (junction, automotive grade) | -55Β°C to +175Β°C |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | β |
| RoHS Status | Compliant | β |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Manufacturer | β | Infineon Technologies |
| Part Series | β | IAUC / OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET (Enhancement Mode) |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | β | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 100 A (package limited) |
| Continuous Drain Current (chip-limited) | β | 120 A at T<sub>C</sub>=25Β°C, R<sub>thJC</sub>=1.2 K/W |
| Maximum R<sub>DS(on)</sub> | β | 4.3 mΞ© |
| Maximum Power Dissipation (P<sub>D</sub>) | β | 125 W (T<sub>C</sub>) |
| Pin Count | β | 8 |
| Moisture Sensitivity Level (MSL) | β | MSL1 (up to 260Β°C peak reflow) |
| Avalanche Rating | β | 100% Avalanche Tested |
| RoHS / REACH | β | RoHS Compliant (Green Product) |
| Channel Mode | β | Enhancement |