IAUZ40N06S5L050ATMA1 vs BSC036NE7NS3GATMA1 Comparison
Detailed side-by-side comparison of IAUZ40N06S5L050ATMA1 by Infineon and BSC036NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 β ActiveInfineon
BSC036NE7NS3GATMA1
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ40N06S5L050ATMA1 | BSC036NE7NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.82 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | [DATA_NEEDED: continuous drain current at Tc=25C] | β |
| Drain Current at T<sub>j</sub> | 90 A | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | 5 mΞ© | β |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | 6.4 mΞ© | β |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 2.2 V at 29 Β΅A | β |
| Total Gate Charge Q<sub>G</sub> | 28.2 nC | β |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25Β°C) | 71 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TSDSON-8-33 (TSDSON-8) | PG-TDSON-8-7 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (super-junction N-channel) | β |
| Automotive Qualification | AEC-Q100 qualified | β |
| RoHS Status | Compliant | ROHS3 Compliant |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Pulsed Drain Current (IDM) | β | 400 A |
| On-Resistance (RDS(on) max @ VGS=10V) | β | 3.6 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | β | 2.6 V |
| Total Gate Charge (Qg typ @ VGS=10V) | β | 45 nC |
| Rise Time (tr typ) | β | 13 ns |
| Fall Time (tf typ) | β | 11 ns |
| Power Dissipation (PD max, Tc=25C) | β | 156 W |
| Power Dissipation (Ta=25C) | β | 2.5 W |
| Thermal Resistance, Junction-to-Case (RthJC) | β | 0.8 C/W |
| Operating Temperature Range | β | -55C to +175C |
| MSL Level | β | 1 |