IAUZ40N06S5L050ATMA1 vs BSC146N10LS5ATMA1 Comparison
Detailed side-by-side comparison of IAUZ40N06S5L050ATMA1 by Infineon and BSC146N10LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 β ActiveInfineon
BSC146N10LS5ATMA1
BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon
BSC146N10LS5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ40N06S5L050ATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.74 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | [DATA_NEEDED: continuous drain current at Tc=25C] | β |
| Drain Current at T<sub>j</sub> | 90 A | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | 5 mΞ© | β |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | 6.4 mΞ© | β |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 2.2 V at 29 Β΅A | β |
| Total Gate Charge Q<sub>G</sub> | 28.2 nC | β |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25Β°C) | 71 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TSDSON-8-33 (TSDSON-8) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (super-junction N-channel) | OptiMOS 5 (logic-level) |
| Automotive Qualification | AEC-Q100 qualified | β |
| RoHS Status | Compliant | Compliant |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | β | 44 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | β | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level (typ. ~1.7 V) |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 52 W |
| Operating Temperature Range | β | -55 C to +150 C (TJ max) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS] |