IAUZ40N08S5N100ATMA1 vs BSC052N08NS5ATMA1 Comparison
Detailed side-by-side comparison of IAUZ40N08S5N100ATMA1 by Infineon and BSC052N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ40N08S5N100ATMA1
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 β ActiveInfineon
BSC052N08NS5ATMA1
BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon
BSC052N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ40N08S5N100ATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.52 |
| Technology | OptiMOS-5 N-Channel MOSFET | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 40 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 68 W | β |
| On-Resistance RDS(on) max | 10 mΞ© @ VGS=10 V, ID=20 A | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | 2.5-3.0 V |
| Total Gate Charge Qg typ | 24.2 nC @ VGS=10 V | β |
| Input Capacitance Ciss | 1591 pF @ VDS=40 V | β |
| Gate-Source Voltage VGS max | Β±20 V | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | β |
| Package | PG-TDSON-8 (S3O8) 3.3 Γ 3.3 mm | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| Channel Type | N-Channel | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC052N08NS5ATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | β | 95 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 5.2 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Total Power Dissipation (Tc) | β | 83 W |
| Total Power Dissipation (Ta) | β | 2.5 W |
| Operating Junction Temperature | β | -55C to +150C |