IAUZ40N08S5N100ATMA1 vs BSC123N08NS3GATMA1 Comparison
Detailed side-by-side comparison of IAUZ40N08S5N100ATMA1 by Infineon and BSC123N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ40N08S5N100ATMA1
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 β ActiveInfineon
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ40N08S5N100ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.71 |
| Technology | OptiMOS-5 N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 40 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 68 W | β |
| On-Resistance RDS(on) max | 10 mΞ© @ VGS=10 V, ID=20 A | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge Qg typ | 24.2 nC @ VGS=10 V | β |
| Input Capacitance Ciss | 1591 pF @ VDS=40 V | β |
| Gate-Source Voltage VGS max | Β±20 V | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | β |
| Package | PG-TDSON-8 (S3O8) 3.3 Γ 3.3 mm | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant with exemption |
| Channel Type | N-Channel | N-Channel |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 3 |
| Configuration | β | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | β | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | β | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | β | 11 A |
| Maximum Pulsed Drain Current | β | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | β | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | β | 66 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Operating Junction Temperature | β | -55C to +150C |
| Automotive Qualified | β | Yes (AEC-Q101) |