IAUZ40N08S5N100ATMA1 vs IAUZ20N08S5L300ATMA1 Comparison
Detailed side-by-side comparison of IAUZ40N08S5N100ATMA1 by Infineon and IAUZ20N08S5L300ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ40N08S5N100ATMA1
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 β ActiveInfineon
IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ20N08S5L300ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ40N08S5N100ATMA1 | IAUZ20N08S5L300ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.81 |
| Technology | OptiMOS-5 N-Channel MOSFET | Trench MOSFET (OptiMOS-5) |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 40 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 68 W | β |
| On-Resistance RDS(on) max | 10 mΞ© @ VGS=10 V, ID=20 A | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge Qg typ | 24.2 nC @ VGS=10 V | β |
| Input Capacitance Ciss | 1591 pF @ VDS=40 V | β |
| Gate-Source Voltage VGS max | Β±20 V | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | β |
| Package | PG-TDSON-8 (S3O8) 3.3 Γ 3.3 mm | PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| Channel Type | N-Channel | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-5 |
| Polarity | β | N-Channel |
| Drain-Source Voltage (Vds) | β | 80 V |
| Continuous Drain Current (Id) | β | 20 A (Tc) |
| Power Dissipation (Pd) | β | 30 W (Tc) |
| On-State Resistance (Rds(on)) | β | 30 mΞ© @ 10 A, 10 V |
| Gate Threshold Voltage (Vgs(th)) | β | Β±20 V (max Vgs rating) |
| Input Capacitance (Ciss) | β | 599 pF @ 40 V |
| Total Gate Charge (Qg) | β | 10.5 nC @ 10 V |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Qualification | β | AEC-Q101 (automotive) |