IAUZ40N10S5N130ATMA1 vs IAUCN10S7L290TATMA1 Comparison
Detailed side-by-side comparison of IAUZ40N10S5N130ATMA1 by Infineon and IAUCN10S7L290TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N10S5N130ATMA1 β ActiveInfineon
IAUCN10S7L290TATMA1
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ40N10S5N130ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUZ40N10S5N130ATMA1 | β |
| Technology | OptiMOS 5 (super-junction trench) | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25Β°C | 40 A | β |
| Pulsed Drain Current (IDM) | 160 A | [DATA_NEEDED: IDM pulse rating] |
| RDS(on) max at VGS=10V | 13 mΞ© | β |
| RDS(on) typical | 10 mΞ© | β |
| Maximum Power Dissipation (Tc) | 68 W | β |
| Package | PG-TSDSON-8-33 (S3O8), 3.3 Γ 3.3 mm | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| Lead-Free / RoHS | ROHS3 Compliant | β |
| Product Family | β | OptiMOSβ’ 7 |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25Β°C | β | 27 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 28.6 mΞ© |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25Β°C | β | 45 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | β | Compliant |
| Lead-Free | β | Yes |
| Avalanche Rated | β | Yes |
| ESD Protection | β | HBM Class 1C (per Infineon datasheet) |