IAUZ40N10S5N130ATMA1 vs IPD068N10N3GATMA1 Comparison

Detailed side-by-side comparison of IAUZ40N10S5N130ATMA1 by Infineon and IPD068N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N10S5N130ATMA1 βœ“ Active

Specification Comparison

Parameter IAUZ40N10S5N130ATMA1 IPD068N10N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUZ40N10S5N130ATMA1 IPD068N10N3GATMA1
Technology OptiMOS 5 (super-junction trench) OptiMOS 3 (N-Channel, Enhancement Mode)
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc=25Β°C 40 A β€”
Pulsed Drain Current (IDM) 160 A β€”
RDS(on) max at VGS=10V 13 mΞ© β€”
RDS(on) typical 10 mΞ© β€”
Maximum Power Dissipation (Tc) 68 W β€”
Package PG-TSDSON-8-33 (S3O8), 3.3 Γ— 3.3 mm PG-TO252-3 (DPAK, 2 leads + tab)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55Β°C to +175Β°C (TJ) β€”
Automotive Qualification AEC-Q101 qualified β€”
Lead-Free / RoHS ROHS3 Compliant β€”
Continuous Drain Current (ID) at Tc β€” 90 A
On-Resistance RDS(on) max β€” 6.8 mOhm
Power Dissipation (PD) at Tc β€” 150 W
Gate Threshold Voltage VGS(th) β€” 2.0 V to 4.0 V (typical)
Operating Junction Temperature β€” -55 C to +175 C
Channel Type β€” N-Channel
Configuration β€” Single
RoHS Status β€” Compliant
MSL Level β€” 1
Packing β€” Tape & Reel (T/R)
Qualification β€” Industrial (non-automotive)

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