IAUZN04S7L030ATMA1 vs IAUC120N04S6L012ATMA1 Comparison
Detailed side-by-side comparison of IAUZN04S7L030ATMA1 by Infineon and IAUC120N04S6L012ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZN04S7L030ATMA1 - 40V 3.05mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUZN04S7L030ATMA1 β ActiveInfineon
IAUC120N04S6L012ATMA1
IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
IAUC120N04S6L012ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZN04S7L030ATMA1 | IAUC120N04S6L012ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $1.21 |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 60 A | β |
| Pulsed Drain Current (IDM, Tj) | 100 A | β |
| On-State Resistance (RDS(on), VGS=10V max) | 3.05 mΞ© | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg at 20V VGS] |
| Power Dissipation (PD, Tc=25Β°C) | 58 W | β |
| Operating Junction Temperature (Tj) | -55C to +175C | β |
| Technology Family | OptiMOS-7 | β |
| Channel Type | N-Channel | β |
| Package | PG-TSDSON-8-44 (S3O8) 3x3 mmΒ² | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (Automotive OptiMOS) | AEC-Q101 qualified |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 6 40V |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC | β | 120 A |
| Pulsed Drain Current (IDM) | β | 480 A |
| On-State Resistance (RDS(on)) at 10V VGS | β | 1.2 mΞ© (typ) |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical VGS(th) value] |
| Power Dissipation (PD) at TC | β | 115 W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (junction) |
| RoHS Status | β | Compliant |
| Delivery Form | β | Tape & Reel |