IAUZN04S7L030ATMA1 vs IAUZ40N06S5L050ATMA1 Comparison
Detailed side-by-side comparison of IAUZN04S7L030ATMA1 by Infineon and IAUZ40N06S5L050ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZN04S7L030ATMA1 - 40V 3.05mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUZN04S7L030ATMA1 β ActiveInfineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZN04S7L030ATMA1 | IAUZ40N06S5L050ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.71 |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 60 A | β |
| Pulsed Drain Current (IDM, Tj) | 100 A | β |
| On-State Resistance (RDS(on), VGS=10V max) | 3.05 mΞ© | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Power Dissipation (PD, Tc=25Β°C) | 58 W | β |
| Operating Junction Temperature (Tj) | -55C to +175C | β |
| Technology Family | OptiMOS-7 | β |
| Channel Type | N-Channel | β |
| Package | PG-TSDSON-8-44 (S3O8) 3x3 mmΒ² | PG-TSDSON-8-33 (TSDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (Automotive OptiMOS) | AEC-Q100 qualified |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 60 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | [DATA_NEEDED: continuous drain current at Tc=25C] |
| Drain Current at T<sub>j</sub> | β | 90 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | β | 5 mΞ© |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | β | 6.4 mΞ© |
| Gate Threshold Voltage V<sub>GS(th)</sub> | β | 2.2 V at 29 Β΅A |
| Total Gate Charge Q<sub>G</sub> | β | 28.2 nC |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 71 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Technology | β | OptiMOS 5 (super-junction N-channel) |
| RoHS Status | β | Compliant |