IGB30N60H3ATMA1 vs IKD15N60RFATMA1 Comparison

Detailed side-by-side comparison of IGB30N60H3ATMA1 by Infineon and IKD15N60RFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IGB30N60H3ATMA1 IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 βœ“ Active
Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 βœ“ Active

Specification Comparison

Parameter IGB30N60H3ATMA1 IKD15N60RFATMA1
Brand Infineon Infineon
Category IGBTs IGBTs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $1.35
Manufacturer Infineon Technologies β€”
Product Family TRENCHSTOP IGBT3 β€”
Collector-Emitter Voltage (VCE) 600 V β€”
Continuous DC Collector Current (IC, TC=25C) 60 A β€”
Pulsed Collector Current (ICpuls) [DATA_NEEDED: pulsed collector current value] β€”
Power Dissipation (Ptot) 187 W β€”
Gate-Emitter Voltage (VGE) +/- 20 V β€”
Collector-Emitter Saturation Voltage (VCE(sat)) 1.95 V (typ, at IC=30 A, VGE=15 V) β€”
Gate-Emitter Threshold Voltage (VGE(th)) [DATA_NEEDED: VGE(th) typical value] β€”
Turn-Off Time (toff) 262 ns (nominal) β€”
Technology Trench Field Stop TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode)
Configuration Single IGBT β€”
Package PG-TO263-3-2 (D2PAK) PG-TO252-3 (DPAK), 3 pins (2 + tab)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -40C to +175C -40C to +175C
Storage Temperature -55C to +150C β€”
Terminal Form Gull Wing β€”
Pin Count 3 (2 + Tab) β€”
RoHS Status Compliant β€”
Switching Behavior MOSFET-like turn-off β€”
Collector-Emitter Voltage (VCES) β€” 600 V
Continuous Collector Current (IC at TC=25C) β€” 30 A
Continuous Collector Current (IC at TC=100C) β€” 15 A
Pulsed Collector Current (ICM) β€” [DATA_NEEDED: ICM value]
Gate-Emitter Voltage (VGES) β€” +/-20 V
Gate-Emitter Threshold (VGE(th)) β€” [DATA_NEEDED: VGE(th) typical value]
VCE(sat) at IC=15A, VGE=15V β€” 1.5 V (typical)
Maximum Power Dissipation (Ptot) β€” 250 W
Integrated Anti-Parallel Diode β€” Yes (RC-Drives Fast, co-packaged)
Switching Speed Class β€” Hard-switching, RC-Drives Fast
Target Application β€” Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives)
RoHS Compliance β€” Compliant

Datasheets & Resources

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