IGB50N60TATMA1 vs IKD06N60RATMA1 Comparison

Detailed side-by-side comparison of IGB50N60TATMA1 by Infineon and IKD06N60RATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IGB50N60TATMA1 IGB50N60TATMA1 - 600V 50A Trenchstop IGBT | Infineon | D2PAK

IGB50N60TATMA1 - 600V 50A Trenchstop IGBT | Infineon | D2PAK

IGB50N60TATMA1 βœ“ Active
Infineon
IKD06N60RATMA1 IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon

IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon

IKD06N60RATMA1 βœ“ Active

Specification Comparison

Parameter IGB50N60TATMA1 IKD06N60RATMA1
Brand Infineon Infineon
Category IGBTs IGBTs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.20 $0.89
Manufacturer Infineon Technologies β€”
Series Trenchstop IGBT3 β€”
Technology Trench + Field-Stop TRENCHSTOP RC-IGBT3 (Reverse Conducting)
Collector-Emitter Voltage (VCES) 600 V β€”
Continuous Collector Current (IC) at TC=25Β°C 100 A β€”
Continuous Collector Current (IC) at TC=100Β°C 50 A β€”
Pulsed Collector Current (ICM, tp limited by Tjmax) 150 A β€”
Total Power Dissipation (Ptot) at TC=25Β°C 333 W β€”
Gate-Emitter Threshold Voltage (VGE(th)) 5.0 V (typ), 6.5 V (max) β€”
Collector-Emitter Saturation Voltage (VCE(sat)) 1.5 V (typ at VGE=15V, IC=50A, TJ=25Β°C) β€”
Short-Circuit Withstand Time (tsc) 5 Β΅s min at VCE=360V, TJ≀150Β°C β€”
Operating Junction Temperature -40 Β°C to +150 Β°C β€”
Package PG-TO263-3-2 (D2PAK / TO-263) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Co-packaged Diode Anti-parallel EmCon3 diode β€”
RoHS Status Compliant Compliant
MSL Level 1 β€”
Configuration Single Single with built-in diode
Transistor Type β€” IGBT - Trench Field Stop with anti-parallel diode
Collector-Emitter Voltage (VCE) β€” 600 V
Continuous Collector Current (IC) at TC=25C β€” 12 A
Pulsed Collector Current (ICM) β€” [DATA_NEEDED: pulsed collector current]
Maximum Power Dissipation β€” 100 W
Gate-Emitter Voltage (VGE) β€” [DATA_NEEDED: VGE max rating]
VCE(sat) at IC=6A, VGE=15V β€” [DATA_NEEDED: VCE(sat) typical]
Diode Forward Voltage (VF) at IF=6A β€” [DATA_NEEDED: VF typical]
Operating Temperature Range β€” -40C to +150C (junction)
Pin Count β€” 3 (2 + Tab)
Automotive Qualified β€” Yes (per FindIC listing)
Switching Frequency Range (typical) β€” 4 kHz to 20 kHz (hard-switching)

Datasheets & Resources

Browse All Products Create BOM Request Quote