IGD06N60TATMA1 vs IGD08N120S7ATMA1 Comparison
Detailed side-by-side comparison of IGD06N60TATMA1 by Infineon and IGD08N120S7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IGD06N60TATMA1 | IGD08N120S7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Transistors | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | TRENCHSTOP IGBT3 | β |
| IGBT Type | Trench Field Stop | β |
| Collector-Emitter Voltage (VCE) | 600 V | β |
| Continuous Collector Current (IC) at TC=25Β°C | 12 A | β |
| Continuous Collector Current (IC) at TC=100Β°C | 6 A | β |
| Maximum Pulsed Collector Current (ICM) | 18 A (per datasheet) | β |
| Maximum Power Dissipation (Ptot) | 88 W | β |
| Gate-Emitter Voltage (VGE) | Β±20 V | β |
| VCE(sat) at IC=6A, VGE=15V, Tj=25Β°C | 1.5 V (typical) | β |
| Gate Threshold Voltage (VGE(th)) | 3.0 V min / 5.0 V max (typical 4.0 V) | β |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon] | β |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff] | β |
| Integrated Diode | Yes, soft-recovery emitter-controlled diode | β |
| Operating Junction Temperature | -40 Β°C to +175 Β°C | -40C to +175C (industry grade) |
| Storage Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-TO252-3-11 (DPAK / TO-252) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Product Family | β | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | β | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | β | 24 A |
| Pulsed Collector Current (Icm) | β | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | β | 106 W |
| Gate-Emitter Voltage (Vge max) | β | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | β | 1.65 V |
| Co-packaged Diode | β | Yes (anti-parallel emitter diode) |
| Technology | β | Trench Field Stop, 7th generation |
| Configuration | β | Single |