IGD06N60TATMA1 vs IKD10N60RC2ATMA1 Comparison
Detailed side-by-side comparison of IGD06N60TATMA1 by Infineon and IKD10N60RC2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IGD06N60TATMA1 | IKD10N60RC2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Transistors | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.83 |
| Manufacturer | Infineon Technologies | β |
| Series | TRENCHSTOP IGBT3 | β |
| IGBT Type | Trench Field Stop | β |
| Collector-Emitter Voltage (VCE) | 600 V | β |
| Continuous Collector Current (IC) at TC=25Β°C | 12 A | β |
| Continuous Collector Current (IC) at TC=100Β°C | 6 A | β |
| Maximum Pulsed Collector Current (ICM) | 18 A (per datasheet) | β |
| Maximum Power Dissipation (Ptot) | 88 W | β |
| Gate-Emitter Voltage (VGE) | Β±20 V | β |
| VCE(sat) at IC=6A, VGE=15V, Tj=25Β°C | 1.5 V (typical) | β |
| Gate Threshold Voltage (VGE(th)) | 3.0 V min / 5.0 V max (typical 4.0 V) | β |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon] | β |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff] | β |
| Integrated Diode | Yes, soft-recovery emitter-controlled diode | Yes - reverse-conducting 2-diode co-packed |
| Operating Junction Temperature | -40 Β°C to +175 Β°C | β |
| Storage Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-TO252-3-11 (DPAK / TO-252) | PG-TO252-3 (DPAK, surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Collector-Emitter Voltage (V_CE) | β | 600 V |
| Continuous Collector Current (I_C nom) | β | 10 A |
| Pulsed Collector Current (I_Cp) | β | 18.8 A |
| Maximum Power Dissipation (P_tot) | β | 79 W |
| Technology | β | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) |
| Operating Temperature Range | β | -40 C to +175 C (junction) |
| Gate-Emitter Voltage (V_GE) | β | [DATA_NEEDED: recommended V_GE value] |
| V_CE(sat) at I_C | β | [DATA_NEEDED: typical V_CE(sat)] |
| Switching Frequency (typical) | β | 10 - 30 kHz (hard-switching) |
| Short-Circuit Withstand Time | β | [DATA_NEEDED: t_sc rating] |
| Qualification | β | Industrial (qualified per Infineon product validation) |