IGLD60R070D1AUMA3 vs IGLR70R200D2SXUMA1 Comparison
Detailed side-by-side comparison of IGLD60R070D1AUMA3 by Infineon and IGLR70R200D2SXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGLD60R070D1AUMA3
IGLD60R070D1AUMA3 - 600V 70mΞ© CoolGaNβ’ eMode GaN FET | Infineon
IGLD60R070D1AUMA3 β ActiveInfineon
IGLR70R200D2SXUMA1
IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΞ© | Infineon
IGLR70R200D2SXUMA1 β ActiveSpecification Comparison
| Parameter | IGLD60R070D1AUMA3 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.10 | $1.24 |
| Technology | GaN HEMT (enhancement-mode, normally-off) | GaN HEMT (E-mode, enhancement-mode) |
| Drain-Source Voltage (VDS) | 600 V | 700 V |
| Continuous Drain Current (ID, Tc) | 15 A | 9.3 A |
| Power Dissipation (PD, Tc) | 114 W | 34 W |
| On-Resistance (RDS(on)) | 70 mΞ© (typical, VGS = 10 V) | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | 1.26 nC |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss] | β |
| Reverse Recovery Charge (Qrr) | Near zero (GaN technology) | β |
| Input Capacitance (Ciss) | 380 pF @ 400 V (per Utmel) | β |
| Package | PG-LSON-8-1 (LSON-8 with exposed pad) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Mounting Type | Surface Mount | β |
| MSL Level | 3 | β |
| Halogen Free | Yes | β |
| RoHS Status | Compliant | β |
| Operating Temperature (Tj) | [DATA_NEEDED: Tj max] | β |
| Series | CoolGaNβ’ | β |
| Polarity | N-Channel | β |
| Packaging | Tape & Reel | β |
| Factory Pack Quantity | 3000 | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolGaN G5 |
| Channel Type | β | N-Channel |
| On-Resistance (RDS(on), max) | β | 200 mΞ© |
| Output Capacitance (Coss) | β | 91 pF |
| Reverse Transfer Capacitance (Crss) | β | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | β | 1.2 V |
| Operating Temperature Range | β | -40 Β°C to +150 Β°C |
| RoHS | β | Compliant |