IGLR70R200D2SXUMA1 vs IGL65R080D2XUMA1 Comparison
Detailed side-by-side comparison of IGLR70R200D2SXUMA1 by Infineon and IGL65R080D2XUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGLR70R200D2SXUMA1
IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΞ© | Infineon
IGLR70R200D2SXUMA1 β ActiveInfineon
IGL65R080D2XUMA1
IGL65R080D2XUMA1 - 650V 80mΞ© CoolGaN G5 Transistor | Infineon
IGL65R080D2XUMA1 β ActiveSpecification Comparison
| Parameter | IGLR70R200D2SXUMA1 | IGL65R080D2XUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.24 | $1.97 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | CoolGaN G5 |
| Channel Type | N-Channel | β |
| Technology | GaN HEMT (E-mode, enhancement-mode) | GaN-on-Si, 200 mm wafer |
| Drain-Source Voltage (VDS) | 700 V | 650 V |
| Continuous Drain Current (ID, Tc) | 9.3 A | 18 A |
| Power Dissipation (PD, Tc) | 34 W | 81 W |
| On-Resistance (RDS(on), max) | 200 mΞ© | β |
| Total Gate Charge (Qg) | 1.26 nC | β |
| Output Capacitance (Coss) | 91 pF | β |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | β |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | β |
| Operating Temperature Range | -40 Β°C to +150 Β°C | -55 Β°C to +150 Β°C (TJ) |
| Package | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-TSON-8-U06 (ThinPAK 8x8) |
| RoHS | Compliant | β |
| Transistor Type | β | N-Channel GaN HEMT (enhancement-mode) |
| On-Resistance RDS(on) | β | 80 mΞ© (typical) |
| Mounting Type | β | Surface Mount, wettable flank |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Typical Applications | β | SMPS, totem-pole PFC, LLC, USB-PD adapters |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 (per JEDEC J-STD-020, where stated) |