IGLR70R200D2SXUMA1 vs IGLR70R270D2SXUMA1 Comparison
Detailed side-by-side comparison of IGLR70R200D2SXUMA1 by Infineon and IGLR70R270D2SXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGLR70R200D2SXUMA1
IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΞ© | Infineon
IGLR70R200D2SXUMA1 β ActiveInfineon
IGLR70R270D2SXUMA1
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΞ© CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 β ActiveSpecification Comparison
| Parameter | IGLR70R200D2SXUMA1 | IGLR70R270D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.24 | $2.13 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | CoolGaNβ’ G5 |
| Channel Type | N-Channel | N-Channel |
| Technology | GaN HEMT (E-mode, enhancement-mode) | Gallium Nitride (GaN) HEMT, enhancement-mode |
| Drain-Source Voltage (VDS) | 700 V | 700 V |
| Continuous Drain Current (ID, Tc) | 9.3 A | 7.3 A |
| Power Dissipation (PD, Tc) | 34 W | 28 W |
| On-Resistance (RDS(on), max) | 200 mΞ© | β |
| Total Gate Charge (Qg) | 1.26 nC | β |
| Output Capacitance (Coss) | 91 pF | β |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | β |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | β |
| Operating Temperature Range | -40 Β°C to +150 Β°C | -40C to +150C (junction) |
| Package | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-TSON-8-8 (ThinPAK) |
| RoHS | Compliant | β |
| On-State Resistance (RDS(on), typ.) | β | 270 mΞ© |
| Mounting Type | β | Surface Mount |
| Gate Drive | β | 0 to 12 V (enhancement-mode, internal gate diode) |
| Wafer Process | β | 200 mm (8-inch) GaN-on-Si |
| RoHS Status | β | Compliant |
| Reverse Recovery Charge (Qrr) | β | 0 nC (no body diode) |