IGLR70R200D2SXUMA1 vs IGLT65R035D2ATMA1 Comparison

Detailed side-by-side comparison of IGLR70R200D2SXUMA1 by Infineon and IGLT65R035D2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IGLR70R200D2SXUMA1

IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΞ© | Infineon

IGLR70R200D2SXUMA1 βœ“ Active

Specification Comparison

Parameter IGLR70R200D2SXUMA1 IGLT65R035D2ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.24 $5.10
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN G5 CoolGaNβ„’ G5 TOLT
Channel Type N-Channel β€”
Technology GaN HEMT (E-mode, enhancement-mode) β€”
Drain-Source Voltage (VDS) 700 V β€”
Continuous Drain Current (ID, Tc) 9.3 A β€”
Power Dissipation (PD, Tc) 34 W β€”
On-Resistance (RDS(on), max) 200 mΞ© β€”
Total Gate Charge (Qg) 1.26 nC β€”
Output Capacitance (Coss) 91 pF β€”
Reverse Transfer Capacitance (Crss) 0.21 pF β€”
Gate Threshold Voltage (VGS(th), typ) 1.2 V β€”
Operating Temperature Range -40 Β°C to +150 Β°C [DATA_NEEDED: Tj min/max]
Package PG-TSON-8-8 (surface mount, ThinPAK top-cooled) PG-HDSOP-16-8 (top-side cooled)
RoHS Compliant β€”
Transistor Type β€” N-Channel enhancement-mode GaN HEMT
Drain-Source Voltage (Vdss) β€” 650 V
Continuous Drain Current (Id) at Tc β€” 47 A
Maximum Power Dissipation (Pd) at Tc β€” 154 W
On-Resistance (Rds(on)) β€” [DATA_NEEDED: typical Rds(on) in mohm]
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: typical Vgs(th)]
Input Capacitance (Ciss) at Vds=400V β€” 540 pF
Mounting Type β€” Surface Mount
Cooling Configuration β€” Top-side cooled (TOLT)
MSL Level β€” [DATA_NEEDED: MSL rating]
RoHS Status β€” Compliant
Lead-Free β€” Yes
Production Wafer Size β€” 200 mm (8 inch)

Datasheets & Resources

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