IGLR70R200D2SXUMA1 vs IPL60R180P6AUMA1 Comparison

Detailed side-by-side comparison of IGLR70R200D2SXUMA1 by Infineon and IPL60R180P6AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IGLR70R200D2SXUMA1

IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon

IGLR70R200D2SXUMA1 ✓ Active
Infineon
IPL60R180P6AUMA1

IPL60R180P6AUMA1 - 600V CoolMOS P6 MOSFET 180mΩ | Infineon

IPL60R180P6AUMA1 ✓ Active

Specification Comparison

Parameter IGLR70R200D2SXUMA1 IPL60R180P6AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.24 $1.92
Manufacturer Infineon Technologies
Product Family CoolGaN G5
Channel Type N-Channel
Technology GaN HEMT (E-mode, enhancement-mode) CoolMOS P6 (Superjunction N-channel MOSFET)
Drain-Source Voltage (VDS) 700 V 600 V
Continuous Drain Current (ID, Tc) 9.3 A
Power Dissipation (PD, Tc) 34 W
On-Resistance (RDS(on), max) 200 mΩ
Total Gate Charge (Qg) 1.26 nC
Output Capacitance (Coss) 91 pF
Reverse Transfer Capacitance (Crss) 0.21 pF
Gate Threshold Voltage (VGS(th), typ) 1.2 V
Operating Temperature Range -40 °C to +150 °C
Package PG-TSON-8-8 (surface mount, ThinPAK top-cooled) PG-VSON-4 (Thin-PAK) surface mount
RoHS Compliant
Gate-Source Voltage (VGS) -20 V to +20 V (max)
Continuous Drain Current (ID) at Tc=25°C 22.4 A
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM]
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V 180 mΩ
Power Dissipation (Ptot) at Tc=25°C 176 W
Operating Junction Temperature Range -55 °C to +150 °C
Storage Temperature Range -55 °C to +150 °C
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC value]
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V (typical 3.0 V)
Mounting Type Surface Mount
MSL (Moisture Sensitivity Level) MSL 1 (per JEDEC J-STD-020)
RoHS Status Compliant
Lead-Free Yes

Datasheets & Resources

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