IGLR70R270D2SXUMA1 vs IGL65R080D2XUMA1 Comparison

Detailed side-by-side comparison of IGLR70R270D2SXUMA1 by Infineon and IGL65R080D2XUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IGLR70R270D2SXUMA1

IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon

IGLR70R270D2SXUMA1 ✓ Active
Infineon
IGL65R080D2XUMA1

IGL65R080D2XUMA1 - 650V 80mΩ CoolGaN G5 Transistor | Infineon

IGL65R080D2XUMA1 ✓ Active

Specification Comparison

Parameter IGLR70R270D2SXUMA1 IGL65R080D2XUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.13 $1.97
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ G5 CoolGaN G5
Technology Gallium Nitride (GaN) HEMT, enhancement-mode GaN-on-Si, 200 mm wafer
Channel Type N-Channel
Drain-Source Voltage (VDS) 700 V 650 V
Continuous Drain Current (ID, Tc) 7.3 A 18 A
Power Dissipation (PD, Tc) 28 W 81 W
On-State Resistance (RDS(on), typ.) 270 mΩ
Package PG-TSON-8-8 (ThinPAK) PG-TSON-8-U06 (ThinPAK 8x8)
Mounting Type Surface Mount Surface Mount, wettable flank
Gate Drive 0 to 12 V (enhancement-mode, internal gate diode)
Wafer Process 200 mm (8-inch) GaN-on-Si
RoHS Status Compliant Compliant
Operating Temperature Range -40C to +150C (junction) -55 °C to +150 °C (TJ)
Reverse Recovery Charge (Qrr) 0 nC (no body diode)
Transistor Type N-Channel GaN HEMT (enhancement-mode)
On-Resistance RDS(on) 80 mΩ (typical)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)]
Typical Applications SMPS, totem-pole PFC, LLC, USB-PD adapters
MSL Level 1 (per JEDEC J-STD-020, where stated)

Datasheets & Resources

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