IKD06N60RATMA1 vs IGD06N60TATMA1 Comparison
Detailed side-by-side comparison of IKD06N60RATMA1 by Infineon and IGD06N60TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IKD06N60RATMA1 | IGD06N60TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | Transistors |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.62 |
| Transistor Type | IGBT - Trench Field Stop with anti-parallel diode | β |
| Configuration | Single with built-in diode | β |
| Collector-Emitter Voltage (VCE) | 600 V | 600 V |
| Continuous Collector Current (IC) at TC=25C | 12 A | β |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | β |
| Maximum Power Dissipation | 100 W | β |
| Gate-Emitter Voltage (VGE) | [DATA_NEEDED: VGE max rating] | Β±20 V |
| Technology | TRENCHSTOP RC-IGBT3 (Reverse Conducting) | β |
| VCE(sat) at IC=6A, VGE=15V | [DATA_NEEDED: VCE(sat) typical] | β |
| Diode Forward Voltage (VF) at IF=6A | [DATA_NEEDED: VF typical] | β |
| Operating Temperature Range | -40C to +150C (junction) | β |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK / TO-252) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified | Yes (per FindIC listing) | β |
| Switching Frequency Range (typical) | 4 kHz to 20 kHz (hard-switching) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | TRENCHSTOP IGBT3 |
| IGBT Type | β | Trench Field Stop |
| Continuous Collector Current (IC) at TC=25Β°C | β | 12 A |
| Continuous Collector Current (IC) at TC=100Β°C | β | 6 A |
| Maximum Pulsed Collector Current (ICM) | β | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | β | 88 W |
| VCE(sat) at IC=6A, VGE=15V, Tj=25Β°C | β | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | β | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Turn-on Switching Energy (Eon) | β | [DATA_NEEDED: Eon] |
| Turn-off Switching Energy (Eoff) | β | [DATA_NEEDED: Eoff] |
| Integrated Diode | β | Yes, soft-recovery emitter-controlled diode |
| Operating Junction Temperature | β | -40 Β°C to +175 Β°C |
| Storage Temperature | β | -55 Β°C to +150 Β°C |
| Lead-Free | β | Yes |