IKD10N60RC2ATMA1 vs IGD06N60TATMA1 Comparison
Detailed side-by-side comparison of IKD10N60RC2ATMA1 by Infineon and IGD06N60TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IKD10N60RC2ATMA1 | IGD06N60TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | Transistors |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.83 | $0.62 |
| Collector-Emitter Voltage (V_CE) | 600 V | β |
| Continuous Collector Current (I_C nom) | 10 A | β |
| Pulsed Collector Current (I_Cp) | 18.8 A | β |
| Maximum Power Dissipation (P_tot) | 79 W | β |
| Technology | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) | β |
| Integrated Diode | Yes - reverse-conducting 2-diode co-packed | Yes, soft-recovery emitter-controlled diode |
| Package | PG-TO252-3 (DPAK, surface mount) | PG-TO252-3-11 (DPAK / TO-252) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -40 C to +175 C (junction) | β |
| Gate-Emitter Voltage (V_GE) | [DATA_NEEDED: recommended V_GE value] | β |
| V_CE(sat) at I_C | [DATA_NEEDED: typical V_CE(sat)] | β |
| Switching Frequency (typical) | 10 - 30 kHz (hard-switching) | β |
| Short-Circuit Withstand Time | [DATA_NEEDED: t_sc rating] | β |
| RoHS Status | Compliant | Compliant |
| Qualification | Industrial (qualified per Infineon product validation) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | TRENCHSTOP IGBT3 |
| IGBT Type | β | Trench Field Stop |
| Collector-Emitter Voltage (VCE) | β | 600 V |
| Continuous Collector Current (IC) at TC=25Β°C | β | 12 A |
| Continuous Collector Current (IC) at TC=100Β°C | β | 6 A |
| Maximum Pulsed Collector Current (ICM) | β | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | β | 88 W |
| Gate-Emitter Voltage (VGE) | β | Β±20 V |
| VCE(sat) at IC=6A, VGE=15V, Tj=25Β°C | β | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | β | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Turn-on Switching Energy (Eon) | β | [DATA_NEEDED: Eon] |
| Turn-off Switching Energy (Eoff) | β | [DATA_NEEDED: Eoff] |
| Operating Junction Temperature | β | -40 Β°C to +175 Β°C |
| Storage Temperature | β | -55 Β°C to +150 Β°C |
| Lead-Free | β | Yes |