IKD10N60RC2ATMA1 vs IGD08N120S7ATMA1 Comparison
Detailed side-by-side comparison of IKD10N60RC2ATMA1 by Infineon and IGD08N120S7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IKD10N60RC2ATMA1 | IGD08N120S7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.83 | $1.65 |
| Collector-Emitter Voltage (V_CE) | 600 V | β |
| Continuous Collector Current (I_C nom) | 10 A | β |
| Pulsed Collector Current (I_Cp) | 18.8 A | β |
| Maximum Power Dissipation (P_tot) | 79 W | β |
| Technology | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) | Trench Field Stop, 7th generation |
| Integrated Diode | Yes - reverse-conducting 2-diode co-packed | β |
| Package | PG-TO252-3 (DPAK, surface mount) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -40 C to +175 C (junction) | β |
| Gate-Emitter Voltage (V_GE) | [DATA_NEEDED: recommended V_GE value] | β |
| V_CE(sat) at I_C | [DATA_NEEDED: typical V_CE(sat)] | β |
| Switching Frequency (typical) | 10 - 30 kHz (hard-switching) | β |
| Short-Circuit Withstand Time | [DATA_NEEDED: t_sc rating] | β |
| RoHS Status | Compliant | Compliant |
| Qualification | Industrial (qualified per Infineon product validation) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | β | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | β | 24 A |
| Pulsed Collector Current (Icm) | β | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | β | 106 W |
| Gate-Emitter Voltage (Vge max) | β | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | β | 1.65 V |
| Co-packaged Diode | β | Yes (anti-parallel emitter diode) |
| Operating Junction Temperature | β | -40C to +175C (industry grade) |
| Configuration | β | Single |