IKD15N60RFATMA1 vs IGB30N60H3ATMA1 Comparison
Detailed side-by-side comparison of IKD15N60RFATMA1 by Infineon and IGB30N60H3ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IKD15N60RFATMA1 | IGB30N60H3ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.35 | $1.62 |
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) | Trench Field Stop |
| Collector-Emitter Voltage (VCES) | 600 V | β |
| Continuous Collector Current (IC at TC=25C) | 30 A | β |
| Continuous Collector Current (IC at TC=100C) | 15 A | β |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | β |
| Gate-Emitter Voltage (VGES) | +/-20 V | β |
| Gate-Emitter Threshold (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | β |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) | β |
| Maximum Power Dissipation (Ptot) | 250 W | β |
| Operating Junction Temperature | -40C to +175C | -40C to +175C |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) | β |
| Package | PG-TO252-3 (DPAK), 3 pins (2 + tab) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast | β |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) | β |
| RoHS Compliance | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | TRENCHSTOP IGBT3 |
| Collector-Emitter Voltage (VCE) | β | 600 V |
| Continuous DC Collector Current (IC, TC=25C) | β | 60 A |
| Pulsed Collector Current (ICpuls) | β | [DATA_NEEDED: pulsed collector current value] |
| Power Dissipation (Ptot) | β | 187 W |
| Gate-Emitter Voltage (VGE) | β | +/- 20 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | β | 1.95 V (typ, at IC=30 A, VGE=15 V) |
| Gate-Emitter Threshold Voltage (VGE(th)) | β | [DATA_NEEDED: VGE(th) typical value] |
| Turn-Off Time (toff) | β | 262 ns (nominal) |
| Configuration | β | Single IGBT |
| Storage Temperature | β | -55C to +150C |
| Terminal Form | β | Gull Wing |
| Pin Count | β | 3 (2 + Tab) |
| RoHS Status | β | Compliant |
| Switching Behavior | β | MOSFET-like turn-off |