IMLT65R040M2HXTMA1 vs AIMBG120R010M1XTMA1 Comparison

Detailed side-by-side comparison of IMLT65R040M2HXTMA1 by Infineon and AIMBG120R010M1XTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
AIMBG120R010M1XTMA1

AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon

AIMBG120R010M1XTMA1 ✓ Active

Specification Comparison

Parameter IMLT65R040M2HXTMA1 AIMBG120R010M1XTMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.25 $41.90
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ G2 (2nd generation SiC trench) CoolSiC™ G1 Automotive SiC Trench MOSFET
Technology Silicon Carbide (SiC) N-channel MOSFET Silicon Carbide (SiC) Trench MOSFET
Drain-Source Voltage (VDS) 650 V 1200 V
Continuous Drain Current (ID, TC) 57 A
Pulsed Drain Current (ID,pulse) 143 A
On-State Resistance RDS(on) (typ, VGS=18V) 40 mΩ
On-State Resistance RDS(on) (max, VGS=18V) 49 mΩ
Total Gate Charge QG 28 nC
Output Charge QOSS @ 400 V 53 nC
Output Energy EOSS @ 400 V 7.2 µJ
Continuous Drain Power Dissipation (PD, TC) 268 W
Recommended Gate Drive Voltage VGS 18 V (turn-off: 0 V or negative)
Operating Junction Temperature -55 °C to +150 °C -55°C to +175°C
Package PG-HDSOP-16-6 (surface mount, top-side-cooled) PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount
Mounting Type Surface Mount Surface Mount
Qualification JEDEC industrial
Packaging Tape & Reel
Special Features Kelvin source pin, low reverse-recovery charge, hard-switching optimized
Channel Type N-Channel
Continuous Drain Current (ID, Tc) 205 A
On-Resistance RDS(on), typ 8.7 mΩ
Power Dissipation (PD, Tc) 882 W
Automotive Qualification AEC-Q101
Pin Count 7 + Tab
RoHS Status Compliant
Lead-Free Yes
MSL Level [DATA_NEEDED: MSL level per JEDEC J-STD-020]

Datasheets & Resources

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