IMLT65R040M2HXTMA1 vs IMLT40R011M2HXTMA1 Comparison
Detailed side-by-side comparison of IMLT65R040M2HXTMA1 by Infineon and IMLT40R011M2HXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 β ActiveInfineon
IMLT40R011M2HXTMA1 - 400V 11mΞ© SiC MOSFET CoolSiC G2 | Infineon
IMLT40R011M2HXTMA1 β ActiveSpecification Comparison
| Parameter | IMLT65R040M2HXTMA1 | IMLT40R011M2HXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.25 | $12.80 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiCβ’ G2 (2nd generation SiC trench) | CoolSiC MOSFET 400V G2 |
| Technology | Silicon Carbide (SiC) N-channel MOSFET | Silicon Carbide (SiC) Gen-2 |
| Drain-Source Voltage (VDS) | 650 V | 400 V |
| Continuous Drain Current (ID, TC) | 57 A | β |
| Pulsed Drain Current (ID,pulse) | 143 A | β |
| On-State Resistance RDS(on) (typ, VGS=18V) | 40 mΞ© | β |
| On-State Resistance RDS(on) (max, VGS=18V) | 49 mΞ© | β |
| Total Gate Charge QG | 28 nC | β |
| Output Charge QOSS @ 400 V | 53 nC | β |
| Output Energy EOSS @ 400 V | 7.2 Β΅J | β |
| Continuous Drain Power Dissipation (PD, TC) | 268 W | β |
| Recommended Gate Drive Voltage VGS | 18 V (turn-off: 0 V or negative) | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-HDSOP-16-6 (surface mount, top-side-cooled) | PG-HDSOP-16-8 (surface mount, top-side cooled) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | β |
| Packaging | Tape & Reel | β |
| Special Features | Kelvin source pin, low reverse-recovery charge, hard-switching optimized | β |
| Transistor Type | β | N-Channel SiC MOSFET |
| Continuous Drain Current (ID, Tc) | β | 144 A |
| Power Dissipation (PD, Tc) | β | 429 W |
| On-State Resistance (RDS(on)) | β | 11 mΞ© (typ) |
| Gate Threshold Voltage (VGS(th)) | β | 4.5 V (benchmark) |
| Recommended Gate Drive Voltage | β | 0 V to 18 V |
| Body Diode | β | Commutation-robust fast body diode, low Qrr |
| Avalanche Rating | β | 100% avalanche tested |
| Interconnection Technology | β | XT (best-in-class thermal performance) |
| Operating Mode | β | Enhancement mode |
| Target Topologies | β | 2- and 3-level hard- and soft-switching |
| Target Applications | β | AI server PSU, SMPS, motor drives |
| RoHS Status | β | Compliant |