IPA60R190C6XKSA1 vs IPB60R190C6ATMA1 Comparison
Detailed side-by-side comparison of IPA60R190C6XKSA1 by Infineon and IPB60R190C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPA60R190C6XKSA1 | IPB60R190C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $1.45 |
| Manufacturer | Infineon Technologies | β |
| Product Family | CoolMOS C6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD, Tc=25C) | 34 W | β |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | 3.5 V (typ) |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C |
| Package | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO263-3 (D2PAK) |
| Mounting Type | Through Hole | Surface Mount |
| Tab Isolation | Fully isolated (4 kV) | β |
| RoHS Status | Compliant | Compliant |
| Lead Free | Yes | β |
| Technology | β | CoolMOS C6 Superjunction N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | β | 20.2 A |
| Power Dissipation (PD) at Tc=25C | β | 151 W |
| On-Resistance RDS(on) max at VGS=10V | β | 190 mOhm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Total Gate Charge (Qg) typ | β | 32 nC |
| Pin Count | β | 3 (Gate, Drain, Source) |
| MSL Level | β | 1 |
| Avalanche Energy Rated | β | Yes (EAS per datasheet) |